Barbato, Alessandro (2018) Reliability and dynamic properties of GaN devices. [Ph.D. thesis]
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Abstract (italian or english)
Nowadays power electronics market is increasingly having the need for high effciency power conversion systems. Due to its outstanding properties in terms of high temperature, high voltage and high frequency capability, GaN material seems to be a valid candidate to provide the solution to the market requirements. In particular, GaN High Electron Mobility Transistors (GaN HEMTs) are promising devices suitable for high voltage and high power applications. In the last years, many works about GaN power HEMTs devices have been published and this confirms the huge interest in this emerging technology. Despite the outstanding performance already demonstrated of GaN HEMTs, market is still wary of this technology due to some still open reliability issues. In particular, many works have been published regarding the reliability of such devices but only few are able to predict the lifetime of such devices working in the final real application with reasonable accuracy. Many failure modes have been investigated in laboratory direct current (DC) and pulsed conditions but only few works try
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