Go to the content. | Move to the navigation | Go to the site search | Go to the menu | Contacts | Accessibility

| Create Account

Scaramuzza, Paolo (2019) AM-PM and AM-AM Distortion Reduction Techniques for Fully-integrated Silicon-Germanium 5G Power Amplifiers. [Ph.D. thesis]

Full text disponibile come:

[img]PDF Document - Accepted Version
Thesis not accessible until 01 October 2022 for intellectual property related reasons.
Visibile to: nobody


Abstract (italian or english)

The fifth generation cellular network technology (5G) is expected to ramp up
during 2020. To accommodate ever increasing bandwidth requirements, the 5G
employs high spectral efficiency modulation schemes and carrier frequencies
in the millimeter-wave frequency (mmWave), where large portions of unused
spectrum are available. Since the path loss increases with the frequency, massive
multiple-input multiple-output (MIMO) technologies will focus the RF energy
onto the receiver using hundreds of antenna elements. Each antenna element is
driven by a power amplifier (PA) which, being the last element in the transmit
(TX) chain, dominates the efficiency and linearity performance of the whole
transmitter. Moreover, higher order modulation schemes are more taxing in
terms of linearity requirements both as to amplitude-to-amplitude (AM-AM)
and to amplitude-to-phase (AM-PM) distortion.
This thesis focuses on circuit solutions to obtain high linearity PAs suitable
for high data rate mmWave applications. Several fully-integrated silicon-
germanium (SiGe) PAs targeting 20 dBm output power are proposed. Starting
from a class J design used as a reference, the main source of AM-PM distortion
is demonstrated to be the BJT input impedance variation with the input signal
amplitude. As a first solution to address the issue, a ladder filter based input
matching network (IMN) is used to offer a 5-fold improvement on AM-PM
distortion over a simple resonant IMN with minimum PAE penalty. To further
reduce the impact of nonlinearities in the transmitted signal, another PA is
proposed, combining the linearity of a CMOS predriver with the high power
handling capability of a SiGe output stage. This PA features 1.5◦ AM-PM
distortion at 1-dB compression point (P1dB ) with 20 % maximum PAE.
Those solutions seem lead to a reduction in efficiency when continuous-wave
measurements are considered. However, compared to the reference designs,
less backoff is needed for the same amount of error vector magnitude (EVM)
and thus, higher average efficiency can be achieved. Other techniques such
as changing the bias point of the PA with the signal envelope or the Doherty
amplifier can also be used to recover the lost efficiency.

EPrint type:Ph.D. thesis
Tutor:Neviani, Andrea
Data di deposito della tesi:30 November 2019
Anno di Pubblicazione:30 November 2019
Key Words:SiGe, PA, Power Amplifier, AM-PM distortion, AM-AM distortion, fully integrated, 5G, fifth-generation
Settori scientifico-disciplinari MIUR:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/03 Telecomunicazioni
Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Struttura di riferimento:Dipartimenti > Dipartimento di Ingegneria dell'Informazione
Codice ID:12185
Depositato il:12 Feb 2021 15:26
Simple Metadata
Full Metadata
EndNote Format

Solo per lo Staff dell Archivio: Modifica questo record