Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is also a brief description of the major interaction mechanisms between ionizing particles and electronic devices.

Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects / Gasperin, Alberto. - (2008).

Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects

Gasperin, Alberto
2008

Abstract

Reliability study and investigation of ionizing radiation effects on advanced non-volatile memories. The memories addressed in this thesis are: nanocrystal memories, Phase Change Memories (PCM), and the Oxide-Nitride-Oxide stack. In the thesis there is also a brief description of the major interaction mechanisms between ionizing particles and electronic devices.
2008
Ionizing radiation, memory, non-volatile, reliability, Flash memories, ONO, Phase Change Memories, Nanocrystal memories.
Advanced Non-Volatile Memories: Reliability and Ionizing Radiation Effects / Gasperin, Alberto. - (2008).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3425599
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