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Trevisanello, Lorenzo Roberto (2008) Analysis of the Temperature impact on Reliability of GaN-based Light Emitting Diodes. [Tesi di dottorato]

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Abstract (inglese)

This thesis reports the results of the three-year research activity on Light Emitting Diodes (LEDs) for Solid State Lighting. In particular, the research project was focused on the study of thermal characterization of Gallium Nitride (GaN) based LEDs, and the impact of the temperature on the reliability of devices.

The work starts from an overview of the State of the art of III-V optoelectronic devices and on reliability aspects of such devices. Afterwards, different characterization methods for thermal characterization of LEDs are presented and discussed with the description of some experimental implementations designed. In the remaining chapters three reliability approaches on different LED structures are presented: (i) an Accelerated Lifetime Testing (ALT) on low-flux Phosphors Converted LEDs, (ii) an ALT on High Brightness LEDs with Chip-on-Board technology, and (iii) a reliability analysis on Deep UV AlGaN-LEDs. In all case studies, the thermal aspects have been stressed in the analysis of the results.

The different activities started from an in-depth knowledge of the device structure and the related issues, and aimed at (i) extrapolating the degradation model that can provide an accurate lifetime estimation, (ii) investigating on physical mechanisms responsible for degradation, (iii) finding a correlation between thermal behaviour and reliability.

The present work permitted to collect new results concerning the mechanisms that still limit the reliability of LEDs, and will provide the experimental and analytical tools suitable for ALT design and implementation.

Abstract (italiano)

Con il presente lavoro di tesi vengono riportati i risultati dell'attività di ricerca triennale su Light Emitting Diode (LED) per illuminazione allo stato solido. In particolare, il progetto di ricerca è stato incentrato sullo studio della caratterizzazione termica di LED in nitruro di gallio (GaN) e sull'impatto della temperatura sull'affidabilità dei dispositivi.

Il lavoro comincia da una panoramica sullo stato dell'arte di dispositivi optoelettronici a semiconduttore composito di tipo III-V e sugli aspetti affidabilistici ad essi legati. In seguito vengono presentati diversi metodi per la caratterizzazione termica dei LED, insieme alla descrizione dettagliata delle diverse implementazioni sperimentali per ottenere tali misure. Nei capitoli restanti vengono presentati e discussi tre diversi approcci di analisi affidabilistica: (i) un test di vita accelerato su LED bianchi a basso flusso luminoso, (ii) un test di vita accelerato su LED ad alto flusso con tecnologia Chip On Board, e (iii) un'analisi affidabilistica di LED in AlGaN con emissione nel profondo ultravioletto. In tutti questi studi, sono stati sottolineati gli aspetti termici nell'analisi dei risultati.

Queste analisi partono da un'approfondita conoscenza della struttura dei dispositivi e delle problematiche relative, con l'obiettivo di (i) trovare un modello di degrado in grado di fornire una corretta stima del tempo di vita, (ii) indagare i meccanismi fisici alla base del degrado, e (iii) individuate una correlazione tra le proprietà termiche e l'affidabilità del dispositivo.

Il lavoro presentato ha permesso di mettere insieme nuovi risultati relativi ai meccanismi che attualmente limitano l'affidabilità dei LED, e ha reso disponibile diversi strumenti sperimentali e analitici utili per la progettazione e l'implementazione di test di vita accelerati futuri.

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Tipo di EPrint:Tesi di dottorato
Relatore:Zanoni, Enrico
Dottorato (corsi e scuole):Ciclo 21 > Scuole per il 21simo ciclo > INGEGNERIA DELL'INFORMAZIONE > INGEGNERIA ELETTRONICA E DELLE TELECOMUNICAZIONI
Data di deposito della tesi:16 Gennaio 2009
Anno di Pubblicazione:16 Gennaio 2008
Parole chiave (italiano / inglese):Light Emitting Diode, Reliability, degradation mechanism, thermal management, characterization, optoelectronics, III-V semiconductors, optical measurement
Settori scientifico-disciplinari MIUR:Area 09 - Ingegneria industriale e dell'informazione > ING-INF/01 Elettronica
Struttura di riferimento:Dipartimenti > Dipartimento di Ingegneria dell'Informazione
Codice ID:1327
Depositato il:16 Gen 2009
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